High-performance visible-blind GaN-based p-i-n photodetectors
Date
2008
Authors
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing LLC
Volume
92
Issue
3
Pages
033507-3 - 033507-1
Language
English
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Abstract
We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was ∼0.23 AW at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7× 103 for wavelengths longer than 400 nm.