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      Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes

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      Author(s)
      Zhang, Y.P.
      Zhang, Z.-H.
      Liu W.
      Tan, S.T.
      Ju, Z.G.
      Zhang X.L.
      Ji, Y.
      Wang L.C.
      Kyaw, Z.
      Hasanov, N.
      Zhu, B.B.
      Lu, S.P.
      Sun X.W.
      Demir, Hilmi Volkan
      Date
      2015
      Source Title
      Optics Express
      Print ISSN
      10944087
      Publisher
      Optical Society of American (OSA)
      Volume
      23
      Issue
      3
      Pages
      A34 - A42
      Language
      English
      Type
      Article
      Item Usage Stats
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      161
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      Abstract
      In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifetime is used for all the samples. However, the experimental results indicate that, though the efficiency droop is suppressed, the LED optical power is first improved and then degraded with the increasing QW number. The analysis of the measured external quantum efficiency (EQE) with the increasing current revealed that an increasingly dominant SRH nonradiative recombination is induced with more epitaxial QWs, which can be related to the defect generation due to the strain relaxation, especially when the effective thickness exceeds the critical thickness. These observations were further supported by the carrier lifetime measurement using a pico-second time-resolved photoluminescence (TRPL) system, which allowed for a revised numerical modeling with the different SRH lifetimes considered. This work provides useful guidelines on choosing the critical QW number when designing LED structures. © 2014 Optical Society of America.
      Keywords
      Carrier lifetime
      Efficiency
      Quantum efficiency
      Semiconductor quantum wells
      Carrier lifetime measurements
      Effective thickness
      External quantum efficiency
      Ingan/gan lightemitting diodes (LEDs)
      Non-radiative recombinations
      Numerical computations
      Shockley read halls
      Time-resolved photoluminescence
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/23148
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.23.000A34
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      • Department of Electrical and Electronics Engineering 3863
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