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dc.contributor.authorSari, E.en_US
dc.contributor.authorNizamoglu, S.en_US
dc.contributor.authorLee, I. H.en_US
dc.contributor.authorBaek, J. H.en_US
dc.contributor.authorDemir, H. V.en_US
dc.date.accessioned2016-02-08T10:03:57Z
dc.date.available2016-02-08T10:03:57Z
dc.date.issued2009-05-29en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/22724
dc.description.abstractElectric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3142386en_US
dc.subjectApplied electric fielden_US
dc.subjectApplied fielden_US
dc.subjectExternal electric fielden_US
dc.subjectField dependenceen_US
dc.subjectInGaN/GaNen_US
dc.subjectInternal quantum efficiencyen_US
dc.subjectLow fielden_US
dc.subjectPhotoluminescence decayen_US
dc.subjectPolarization fielden_US
dc.subjectQuantum heterostructuresen_US
dc.subjectRadiative decayen_US
dc.subjectRadiative recombinationen_US
dc.subjectTime-resolved photoluminescenceen_US
dc.subjectCarrier lifetimeen_US
dc.subjectCrystalsen_US
dc.subjectElectric field measurementen_US
dc.subjectPhotoluminescenceen_US
dc.subjectElectric fieldsen_US
dc.titleElectric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fieldsen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentNanotechnology Research Center
dc.departmentInstitute of Materials Science and Nanotechnology
dc.departmentDepartment of Physics
dc.citation.spage211107-1en_US
dc.citation.epage211107-3en_US
dc.citation.volumeNumber94en_US
dc.citation.issueNumber21en_US
dc.identifier.doi10.1063/1.3142386en_US
dc.publisherAmerican Institute of Physicsen_US


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