• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

      Thumbnail
      View / Download
      944.7 Kb
      Author
      Arslan, E.
      Altındal, S.
      Özçelik, S.
      Özbay, Ekmel
      Date
      2009
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Electronic ISSN
      1361-6641
      Publisher
      Institute of Physics Publishing Ltd.
      Volume
      24
      Issue
      7
      Language
      English
      Type
      Article
      Item Usage Stats
      121
      views
      183
      downloads
      Abstract
      The forward current-voltage-temperature characteristics of (Ni/Au)-Al 0.83In0.17N/AlN/GaN heterostructures were studied in a temperature range of 80-375 K. The temperature dependences of the tunneling saturation current (It) and tunneling parameters (E0) were obtained. Weak temperature dependence of the saturation current and the absence of temperature dependence of the tunneling parameters were observed in this temperature range. The results indicate that in the temperature range of 80-375 K, the mechanism of charge transport in the (Ni/Au)-Al0.83In 0.17N/AlN/GaN heterostructure is performed by tunneling among dislocations intersecting the space-charge region. A model is used for nonuniform tunneling along these dislocations that intersect the space-charge region. The dislocation density that was calculated from the current-voltage characteristics, according to a model of tunneling along the dislocation line, gives the value 7.4 × 108 cm-2. This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements value of 5.9 × 108 cm-2. These data show that the current flows manifest a tunneling character, even at room temperature.
      Permalink
      http://hdl.handle.net/11693/22650
      Published Version (Please cite this version)
      http://doi.org/10.1088/0268-1242/24/7/075003
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy