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dc.contributor.authorAktürk, E.en_US
dc.contributor.authorAtaca, C.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2016-02-08T09:59:03Z
dc.date.available2016-02-08T09:59:03Z
dc.date.issued2010en_US
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/11693/22356
dc.description.abstractBased on the first-principles plane wave calculations, we studied the adsorption of Si and Geon graphene. We found that these atoms are bound to graphene at the bridge site with a significant binding energy, while many other atoms are bound at the hollow site above the center of hexagon. It is remarkable that these adatoms may induce important changes in the electronic structure of graphene even at low coverage. Semimetallic graphene becomes metallized and attains a magnetic moment. The combination of adatom orbitals with those of ππ- and π∗π∗-states of bare graphene is found responsible for these effects.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3368704en_US
dc.subjectBridge sitesen_US
dc.subjectFirst-principlesen_US
dc.subjectHollow sitesen_US
dc.subjectOrbitalsen_US
dc.subjectPlane wave calculationsen_US
dc.subjectAdatomsen_US
dc.subjectAdsorptionen_US
dc.subjectBinding energyen_US
dc.subjectElectronic structureen_US
dc.subjectGermaniumen_US
dc.subjectGraphiteen_US
dc.subjectMagnetic momentsen_US
dc.subjectGrapheneen_US
dc.titleEffects of silicon and germanium adsorbed on grapheneen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.citation.volumeNumber96en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1063/1.3368704en_US
dc.publisherA I P Publishing LLCen_US
dc.contributor.bilkentauthorÇıracı, Salim


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