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dc.contributor.authorYildiz, A.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorTasli, P.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorKasap, M.en_US
dc.date.accessioned2016-02-08T09:58:48Z
dc.date.available2016-02-08T09:58:48Z
dc.date.issued2009-10-13en_US
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/11693/22337
dc.description.abstractThe low-temperature conductivity of InxGa1-xN alloys (0.06 ≤ x ≤ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1-xN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1-xN alloys. In addition, all of the InxGa1-xN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as xc = 0.0543 for InxGa1-xN alloys.en_US
dc.language.isoEnglishen_US
dc.source.titleCurrent Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.cap.2009.10.004en_US
dc.subjectElectronic transporten_US
dc.subjectInGaNen_US
dc.subjectMITen_US
dc.titleDetermination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 ≤ x ≤ 0.135) layersen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage838en_US
dc.citation.epage841en_US
dc.citation.volumeNumber10en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1016/j.cap.2009.10.004en_US
dc.publisherElsevieren_US
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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