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dc.contributor.authorTurut, A.en_US
dc.contributor.authorKarabulut, A.en_US
dc.contributor.authorEjderha, K.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2016-02-08T09:56:36Z
dc.date.available2016-02-08T09:56:36Z
dc.date.issued2015en_US
dc.identifier.issn2053-1591
dc.identifier.urihttp://hdl.handle.net/11693/22181
dc.description.abstractHigh-k Al2O3 with metallic oxide thickness of about 3 nmon n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C-V) and current-voltage (I-V) properties at 300 K. The saturation current of the forward bias and reverse bias I-V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I-V characteristics. The C-Vcharacteristics of the structure have shown almost no hysteresis from +3 Vto -10 Vwith frequency as a parameter. The reverse biasC-V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz.en_US
dc.language.isoEnglishen_US
dc.source.titleMaterials Research Expressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/2053-1591/2/4/046301en_US
dc.subjectAtomic layer dedepositionen_US
dc.subjectHigh dielectric materialen_US
dc.subjectMIS devicesen_US
dc.titleCapacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layeren_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.departmentNanotechnology Research Centeren_US
dc.citation.volumeNumber2en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1088/2053-1591/2/4/046301en_US
dc.publisherInstitute of Physics Publishingen_US


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