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dc.contributor.authorYu, H.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorOzturk, M.en_US
dc.contributor.authorBolukbas, B.en_US
dc.contributor.authorKelekci, O.en_US
dc.contributor.authorOzturk, M. K.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorCakmak, H.en_US
dc.contributor.authorDemirel, P.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:56:08Z
dc.date.available2016-02-08T09:56:08Z
dc.date.issued2010-08-03en_US
dc.identifier.issn1862-6300
dc.identifier.urihttp://hdl.handle.net/11693/22145
dc.description.abstractTo improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al xGa 1-xN double heterostructure (DH-HEMTs) were designed and fabricated by replacing the semi-insulating GaN buffer with content graded Al xGa 1-xN (x=x 1 → x 2, x 1 > x 2), in turn linearly lowering the Al content x from x 1=90% to x 2=5% toward the front side GaN channel on a high temperature AlN buffer layer. The use of a highly resistive Al xGa 1-xN epilayer suppresses the parasitic conduction in the GaN buffer, and the band edge discontinuity limits the channel electrons spillover, thereby reducing leakage current and drain current collapse. In comparison with the conventional HEMT that use a semi-insulating GaN buffer, the fabricated DH-HEMT device with the same size presents a remarkable enhancement of the breakdown voltage.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssa.201026270en_US
dc.subjectAlGaNen_US
dc.subjectBreakdownen_US
dc.subjectGaNen_US
dc.subjectHeterostructuresen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleImprovement of breakdown characteristics in AlGaN/GaN/AlxGa 1-xN HEMT based on a grading Al xGa 1-xN buffer layeren_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Physics
dc.citation.spage2593en_US
dc.citation.epage2596en_US
dc.citation.volumeNumber207en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1002/pssa.201026270en_US
dc.publisherWileyen_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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