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dc.contributor.authorOcak, Y.S.en_US
dc.contributor.authorGenisel, M.F.en_US
dc.contributor.authorKiliçoǧlu, T.en_US
dc.date.accessioned2016-02-08T09:56:07Z
dc.date.available2016-02-08T09:56:07Z
dc.date.issued2010en_US
dc.identifier.issn1679317
dc.identifier.urihttp://hdl.handle.net/11693/22143
dc.description.abstractElectrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage (I-V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance-voltage (C-V) measurements have been compared the ones obtained from I-V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C-V and Rs-V measurements. © 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titleMicroelectronic Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mee.2010.04.003en_US
dc.subjectBarrier heighten_US
dc.subjectSchottky diodesen_US
dc.subjectSeries resistanceen_US
dc.subjectSputteringen_US
dc.subjectTantalumen_US
dc.subjectBand gapsen_US
dc.subjectBarrier heightsen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectCharacteristic parameteren_US
dc.subjectCurrent voltageen_US
dc.subjectElectrical propertyen_US
dc.subjectI-V measurementsen_US
dc.subjectIdeality factorsen_US
dc.subjectInhomogeneitiesen_US
dc.subjectInterface stateen_US
dc.subjectNative oxide layeren_US
dc.subjectSchottky diodesen_US
dc.subjectSeries resistanceen_US
dc.subjectSeries resistancesen_US
dc.subjectElectric propertiesen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSemiconductor diodesen_US
dc.subjectTantalumen_US
dc.subjectSchottky barrier diodesen_US
dc.titleTa/Si Schottky diodes fabricated by magnetron sputtering techniqueen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistry
dc.citation.spage2338en_US
dc.citation.epage2342en_US
dc.citation.volumeNumber87en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1016/j.mee.2010.04.003en_US


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