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dc.contributor.authorYildiz, A.en_US
dc.contributor.authorTasli, P.en_US
dc.contributor.authorSarikavak, B.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorOzturk, M. K.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T09:54:23Z
dc.date.available2016-02-08T09:54:23Z
dc.date.issued2011en_US
dc.identifier.issn1063-7826
dc.identifier.urihttp://hdl.handle.net/11693/22021
dc.description.abstractElectrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductorsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1134/S1063782611010234en_US
dc.titleGrain boundary related electrical transport in Al-rich AlxGa1-xN layers grown by metal-organic chemical vapor depositionen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage33en_US
dc.citation.epage36en_US
dc.citation.volumeNumber45en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1134/S1063782611010234en_US
dc.publisherM A I K Nauka - Interperiodicaen_US


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