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dc.contributor.authorÇörekçi, S.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorBengi, A.en_US
dc.contributor.authorÇakmak, M.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, E.en_US
dc.date.accessioned2016-02-08T09:54:19Z
dc.date.available2016-02-08T09:54:19Z
dc.date.issued2010-10-23en_US
dc.identifier.issn0022-2461
dc.identifier.urihttp://hdl.handle.net/11693/22015
dc.description.abstractAn AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques. The optical quality of the thick-GaN layer was also evaluated in detail by a photoluminescence (PL) measurement. It was found that the AlN buffer layer possesses high crystal quality and an atomically flat surface with a root-mean-square (rms) roughness of 0.16 nm. The screw-and edge-type dislocation densities of the thick-GaN layer were determined as 5.4 9 107 and 5.0 9 109 cm-2 by means of the mosaic crystal model, respectively. It was observed that the GaN layer has a smooth surface with an rms of 0.84 nm. Furthermore, the dark spot density of the GaN surface was estimated as 6.5 9 108 cm-2 over a scan area of 4 μm2. © Springer Science+Business Media, LLC 2010.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Materials Scienceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10853-010-4973-7en_US
dc.subjectAtomically flat surfaceen_US
dc.subjectCrystal qualitiesen_US
dc.subjectDark spotsen_US
dc.subjectDislocation densitiesen_US
dc.subjectGaN layersen_US
dc.subjectHigh-resolution x-ray diffractionen_US
dc.subjectMosaic crystal modelen_US
dc.subjectOptical qualitiesen_US
dc.subjectPhotoluminescence measurementsen_US
dc.subjectRoot mean square roughnessen_US
dc.titleCharacterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVDen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Centeren_US
dc.citation.spage1606en_US
dc.citation.epage1612en_US
dc.citation.volumeNumber46en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1007/s10853-010-4973-7en_US
dc.publisherSpringeren_US


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