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      Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes

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      Author
      Arslan, E.
      Bütün, S.
      Şafak, Y.
      Çakmak, H.
      Yu, H.
      Özbay, Ekmel
      Date
      2010-10-13
      Source Title
      Microelectronics Reliability
      Print ISSN
      0026-2714
      Publisher
      Elsevier
      Volume
      51
      Issue
      3
      Pages
      576 - 580
      Language
      English
      Type
      Article
      Item Usage Stats
      164
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      127
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      Abstract
      The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current transport mechanisms for (Ni/Au)-AlN/GaN SBDs, by taking the Js(tunnel), E 0, and Rs as adjustable fit parameters, the experimental J-V data were fitted to the analytical expressions given for the current transport mechanisms in a wide range of applied biases and at different temperatures. Fitting results show the weak temperature dependent behavior in the saturation current and the temperature independent behavior of the tunneling parameters in this temperature range. Therefore, it has been concluded that the mechanism of charge transport in (Ni/Au)-AlN/GaN SBDs, along the dislocations intersecting the space charge region, is performed by tunneling. In addition, in order to analyze the trapping effects in (Ni/Au)-AlN/GaN SBDs, the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics were measured in the frequency range 0.7-50 kHz. A detailed analysis of the frequency-dependent capacitance and conductance data was performed, assuming the models in which traps are located at the heterojunction interface. The density (Dt) and time constants (τt) of the trap states have been determined as a function of energy separation from the conduction-band edge (Ec - Et) as Dt≅ (5-8)×10 12eV-1 cm-2andτt≅(43-102) μs, respectively.
      Keywords
      Analytical expressions
      Applied bias
      Capacitance voltage
      Charge transport
      Conduction band edge
      Current transport mechanism
      Energy separations
      Fit parameters
      Fitting results
      Frequency ranges
      Frequency-dependent capacitance
      Heterojunction interfaces
      Saturation current
      Space charge regions
      Temperature dependent behavior
      Temperature range
      Time constants
      Trap state
      Trapping effects
      Tunneling parameter
      Capacitance
      Heterojunctions
      Schottky barrier diodes
      Current voltage characteristics
      Permalink
      http://hdl.handle.net/11693/21994
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.microrel.2010.09.017
      Collections
      • Department of Electrical and Electronics Engineering 3605
      • Department of Physics 2336
      • Nanotechnology Research Center (NANOTAM) 1031
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