Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure
Semiconductor Science and Technology
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21832
The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 × 1013 cm-2 with a high electron mobility of 1540 cm2 V-1 s-1. An Al0.83In0.17N barrier HEMT device with 1 νm gate length provides a current density of 1.0 A mm-1 at VGS = 0 V and an extrinsic transconductance of 242 mS mm-1, which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 °C have been applied to Al 0.83In0.17N and Al0.3Ga0.7N barrier heterostructures. As expected, the electrical properties of an Al 0.83In0.17N barrier HEMT structure showed less stability than that of an Al0.3Ga0.7N barrier HEMT to the thermal annealing. The structural properties of Al0.83In0.17N/GaN also showed more evidence for decomposition than that of the Al 0.3Ga0.7N/GaN structure after 800 °C post-annealing. © 2011 IOP Publishing Ltd.
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