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dc.contributor.authorAtar, F. B.en_US
dc.contributor.authorYesilyurt, A.en_US
dc.contributor.authorOnbasli, M. C.en_US
dc.contributor.authorHanoglu, O.en_US
dc.contributor.authorOkyay, A. K.en_US
dc.date.accessioned2016-02-08T09:50:26Z
dc.date.available2016-02-08T09:50:26Z
dc.date.issued2011-09-18en_US
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/21730
dc.description.abstractThe temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.en_US
dc.description.sponsorshipEU FP7 Marie Curie IRG Granten_US
dc.description.sponsorshipTUBITAK EEEAG Grantsen_US
dc.description.sponsorshipTurkish Ministry of Industry and Trade Seed Fund and TUBITAK BIDEPen_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LED.2011.2164390en_US
dc.subjectBolometersen_US
dc.subjectGermaniumen_US
dc.subjectQuantum wellsen_US
dc.subjectSiliconen_US
dc.titleGe/SiGe quantum well p-i-n structures for uncooled infrared bolometersen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentInstitute of Materials Science and Nanotechnology
dc.citation.spage1567en_US
dc.citation.epage1569en_US
dc.citation.volumeNumber32en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1109/LED.2011.2164390en_US
dc.publisherIEEEen_US


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