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dc.contributor.authorYu, H. Y.en_US
dc.contributor.authorPark, J. H.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorSaraswat, K. C.en_US
dc.date.accessioned2016-02-08T09:47:38Z
dc.date.available2016-02-08T09:47:38Z
dc.date.issued2012-03-02en_US
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/21527
dc.description.abstractSelective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LED.2011.2181814en_US
dc.subjectArea dependenten_US
dc.subjectGermaniumen_US
dc.subjectMonolithicen_US
dc.subjectOptoelectronicsen_US
dc.subjectAnnealing cyclesen_US
dc.subjectArea dependenten_US
dc.subjectHigh qualityen_US
dc.subjectLow defect densitiesen_US
dc.subjectMetal-semiconductor-metal photodiodesen_US
dc.subjectMonolithicen_US
dc.subjectMultistep depositionen_US
dc.subjectRoot mean squaresen_US
dc.subjectSi substratesen_US
dc.subjectThreading dislocation densitiesen_US
dc.subjectMonolithic integrated circuitsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectSiliconen_US
dc.subjectSilicon compoundsen_US
dc.subjectSilicon oxidesen_US
dc.subjectSurface roughnessen_US
dc.subjectGermaniumen_US
dc.titleSelective-area high-quality germanium growth for monolithic integrated optoelectronicsen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage579en_US
dc.citation.epage581en_US
dc.citation.volumeNumber33en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1109/LED.2011.2181814en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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