XPS investigation of a Si-diode in operation
3527 - 3530
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21288
X-ray photoelectron spectroscopy (XPS) is utilized to investigate a Si-diode during its operation under both forward and reverse bias. The technique traces chemical and location specified surface potential variations as shifts of the peak positions with respect to the magnitude as well as the polarity of the applied voltage bias, which enables one to separate the dopant dependent shifts from those of the chemical ones. © 2012 The Royal Society of Chemistry.