Absorption enhancement in InGaN-based photonic crystal-implemented solar cells
Journal of Nanophotonics
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21200
We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized. © 2012 Society of Photo-Optical Instrumentation Engineers (SPIE).
- Research Paper 7144