Metal-semiconductor-metal photodetector on as-deposited TiO2 thin films on sapphire substrate
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
AVS Science and Technology Society
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21156
TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal-semiconductor-metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 × 10-9 A/cm2 at 5 V bias and 1.73 A/W at 50 V bias, respectively. Breakdown is not observed up to 50 V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps. © 2013 American Vacuum Society.
- Research Paper 7144