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dc.contributor.authorDonmez, I.en_US
dc.contributor.authorAkgun, C. O.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2016-02-08T09:41:51Z
dc.date.available2016-02-08T09:41:51Z
dc.date.issued2013en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/21145
dc.description.abstractGallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (ALD) using trimethylgallium as the gallium precursor and oxygen plasma as the oxidant. A wide ALD temperature window was observed from 100 to 400 °C, where deposition rate was constant at ∼0.53 Å/cycle. X-ray photoelectron spectroscopy survey scans indicated the presence of gallium, oxygen, and carbon elements with concentrations of ∼36, ∼51.8, and ∼12.2 at. %, respectively. As-deposited films were amorphous; upon annealing at 900 °C under N 2 atmosphere for 30 min, polycrystalline β-Ga2O 3 phase with a monoclinic crystal structure was obtained. Refractive index and root mean square roughness of the annealed Ga2O3 film were higher than those of the as-deposited due to crystallization. © 2013 American Vacuum Society.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Vacuum Science & Technology Aen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4758782en_US
dc.titleLow temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasmaen_US
dc.typeArticleen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.citation.volumeNumber31en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1116/1.4758782en_US
dc.publisherA I P Publishingen_US


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