Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/21145
Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (ALD) using trimethylgallium as the gallium precursor and oxygen plasma as the oxidant. A wide ALD temperature window was observed from 100 to 400 °C, where deposition rate was constant at ∼0.53 Å/cycle. X-ray photoelectron spectroscopy survey scans indicated the presence of gallium, oxygen, and carbon elements with concentrations of ∼36, ∼51.8, and ∼12.2 at. %, respectively. As-deposited films were amorphous; upon annealing at 900 °C under N 2 atmosphere for 30 min, polycrystalline β-Ga2O 3 phase with a monoclinic crystal structure was obtained. Refractive index and root mean square roughness of the annealed Ga2O3 film were higher than those of the as-deposited due to crystallization. © 2013 American Vacuum Society.
Showing items related by title, author, creator and subject.
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Ozgit, C.; Donmez I.; Alevli, M.; Biyikli, N. (2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ...
Tunable nano devices fabricated by controlled deposition of gold nanoparticles via focused ion beam Shahmoon, A.; Limon O.; Girshevitz O.; Fleger, Y.; Demir, H. V.; Zalevsky, Z. (2010)In this paper, we present the fabrication procedures as well as the preliminary experimental results of a novel method for significantly simplified deposition of charged nanoparticles at specific patterns based on focused ...
Özden A.; Şar H.; Yeltik A.; Madenoğlu B.; Sevik C.; Ay F.; Perkgöz N.K. (Wiley-VCH Verlag, 2016)In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ-Raman, µ-photoluminescence (PL) and ...