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      Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

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      Author
      Donmez, I.
      Akgun, C. O.
      Bıyıklı, Necmi
      Date
      2013
      Source Title
      Journal of Vacuum Science & Technology A
      Print ISSN
      0734-2101
      Publisher
      A I P Publishing
      Volume
      31
      Issue
      1
      Language
      English
      Type
      Article
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      Abstract
      Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (ALD) using trimethylgallium as the gallium precursor and oxygen plasma as the oxidant. A wide ALD temperature window was observed from 100 to 400 °C, where deposition rate was constant at ∼0.53 Å/cycle. X-ray photoelectron spectroscopy survey scans indicated the presence of gallium, oxygen, and carbon elements with concentrations of ∼36, ∼51.8, and ∼12.2 at. %, respectively. As-deposited films were amorphous; upon annealing at 900 °C under N 2 atmosphere for 30 min, polycrystalline β-Ga2O 3 phase with a monoclinic crystal structure was obtained. Refractive index and root mean square roughness of the annealed Ga2O3 film were higher than those of the as-deposited due to crystallization. © 2013 American Vacuum Society.
      Permalink
      http://hdl.handle.net/11693/21145
      Published Version (Please cite this version)
      http://dx.doi.org/10.1116/1.4758782
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      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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