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dc.contributor.authorÇörekçi, S.en_US
dc.contributor.authorÖztürk, M. K.en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorÇakmak, M.en_US
dc.contributor.authorÖzçelik, S.en_US
dc.contributor.authorÖzbay, E.en_US
dc.date.accessioned2016-02-08T09:38:22Z
dc.date.available2016-02-08T09:38:22Z
dc.date.issued2013en_US
dc.identifier.issn1063-7826
dc.identifier.urihttp://hdl.handle.net/11693/20942
dc.description.abstractEffects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 108 cm-2. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductorsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1134/S1063782613060080en_US
dc.titleEffects of high - temperature AIN buffer on the microstructure of AlGaN/GaN HEMTsen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage820en_US
dc.citation.epage824en_US
dc.citation.volumeNumber47en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1134/S1063782613060080en_US
dc.publisherPleiades Publishingen_US


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