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      •   BUIR Home
      • University Library
      • Bilkent Theses
      • Theses - Department of Electrical and Electronics Engineering
      • Dept. of Electrical and Electronics Engineering - Master's degree
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      A ku-band phemt mmic high power amplifier design

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      Embargo Lift Date: 2016-07-22
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      Author(s)
      Değirmenci, Ahmet
      Advisor
      Atalar, Abdullah
      Date
      2014
      Publisher
      Bilkent University
      Language
      English
      Type
      Thesis
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      Abstract
      Power amplifiers are regarded as the one of the most important part of the radar and communication systems. In order to satisfy the system specifications, the power amplifiers must provide high output power and high efficiency at the same time. AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT) provides significant advantages offering high output power and high gain at RF and microwave frequencies. Considering the electrical performance, cost and the reliability issues, pHEMT monolithic microwave integrated circuit (MMIC) high power amplifiers are one of the best alternatives at Ku-band frequencies (12-18 GHz portion of the electromagnetic spectrum in the microwave range of frequencies). In this thesis, a three-stage AlGaAs/InGaAs/GaAs pHEMT MMIC high power amplifier is developed which operates between 16-17.5 GHz. Based on 0.25 µm gate-length pHEMT process, the MMIC is fabricated on 4-mil thick wafer with the size of 5.5 x 5.7 mm2 . Under 8V drain voltage operation, 26.5-24 dB small signal gain, 10-W (40 dBm) continuous-wave mode output power at 3 dB compression with %25-30 drain efficiency is achieved when the base temperature is 85◦C.
      Keywords
      MMIC
      Power Amplifier
      GaAs-based PHEMT
      0.25µm
      Ku-Band
      Permalink
      http://hdl.handle.net/11693/18318
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      • Dept. of Electrical and Electronics Engineering - Master's degree 631
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