A ku-band phemt mmic high power amplifier design
Author(s)
Advisor
Atalar, AbdullahDate
2014Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
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Abstract
Power amplifiers are regarded as the one of the most important part of the radar
and communication systems. In order to satisfy the system specifications, the
power amplifiers must provide high output power and high efficiency at the same
time. AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors
(PHEMT) provides significant advantages offering high output power and high
gain at RF and microwave frequencies. Considering the electrical performance,
cost and the reliability issues, pHEMT monolithic microwave integrated circuit
(MMIC) high power amplifiers are one of the best alternatives at Ku-band frequencies
(12-18 GHz portion of the electromagnetic spectrum in the microwave
range of frequencies).
In this thesis, a three-stage AlGaAs/InGaAs/GaAs pHEMT MMIC high
power amplifier is developed which operates between 16-17.5 GHz. Based on 0.25
µm gate-length pHEMT process, the MMIC is fabricated on 4-mil thick wafer
with the size of 5.5 x 5.7 mm2
. Under 8V drain voltage operation, 26.5-24 dB
small signal gain, 10-W (40 dBm) continuous-wave mode output power at 3 dB
compression with %25-30 drain efficiency is achieved when the base temperature
is 85◦C.