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dc.contributor.advisorÖzbay, Ekmel
dc.contributor.authorIslam, M Saiful
dc.date.accessioned2016-01-08T20:13:18Z
dc.date.available2016-01-08T20:13:18Z
dc.date.issued1996
dc.identifier.urihttp://hdl.handle.net/11693/17772
dc.descriptionAnkara : Department of Physics and Institute of Engineering and Science, Bilkent University, 1996.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1996.en_US
dc.descriptionIncludes bibliographical references leaves 75-78.en_US
dc.description.abstractHigh speed, high external quantum efficiency and narrow spectral linewidth make resonant cavity enhanced (RC E) Schottky photodetector a good candidate for telecommunication applications. In this thesis, we present our work for the design, fabrication and characterization of a RCE Schottky photodiode with high quantum efficiency and high speed. We present experimental results on a RCE photodiode having an operating wavelength of 900 nm. The absorption takes place in a thin InGaAs layer placed inside the GaAs cavity. The active region was grown above a highreflectivity GaAs/AIAs quarter-wavelength Bragg reflector. The top mirror consisted of a 200A thin Au layer which also acted as Schottky metal of the device. An external quantum efficiency of 55% was obtained from our devices. We demonstrate that the spectral response can be tailored by etching the top surface of the microcavity. Our high speed measurements yielded a FW HM of 30 ps, which is the record response for any RCE Schottky photodiode ever reported.en_US
dc.description.statementofresponsibilityIslam, M Saifulen_US
dc.format.extentxi, 78 leavesen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHigh Speeden_US
dc.subjectResonant Cavityen_US
dc.subjectPhotodetectoren_US
dc.subjectSchottky Diodeen_US
dc.subjectHigh Quantum Efficiencyen_US
dc.subjectFabry-Perot Cavityen_US
dc.subjectResonant Detectoren_US
dc.subjectSchottky Diode Detectoren_US
dc.subjectEnhancementen_US
dc.subject.lccTK7871.89.S35 I84 1996en_US
dc.subject.lcshDiodes,Schottky-barrier.en_US
dc.titleFabrication and characterization of high speed resonant cavity enhanced Schottky photodiodesen_US
dc.typeThesisen_US
dc.departmentDepartment of Physicsen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US


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