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dc.contributor.advisorAytür, Orhan
dc.contributor.authorGökkavas, Mutlu
dc.date.accessioned2016-01-08T20:13:17Z
dc.date.available2016-01-08T20:13:17Z
dc.date.issued1996
dc.identifier.urihttp://hdl.handle.net/11693/17771
dc.descriptionAnkara : Department of Electrical and Electronics Engineering and the Institute of Engineering and Sciences of Bilkent University, 1996.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1996.en_US
dc.descriptionIncludes bibliographical references leaves 67-69.en_US
dc.description.abstractRecently, novel photodetectors which employ a multiple-pass detection scheme to increase the efficiency-bandwidth product have been developed. In this thesis. we present our work on .\iAs/GaAs resonant cavity enhanced (RCE) Schottky photodiodes w'ith an InGaAs absorber. Quantum efficiency enhancement is acconiplished by placing the InGaAs absorber inside a Fabry-Perot microcavity whose mirrors are formed b}' the Au Schottky layer cind an rVlAs/GaAs quarter wave stcick (QWS) reflector. In the design and analysis of the structures, scattering (S) matrices are used. Reflectivity, transmissivity, quantum efficiency, and the loss in the Schottky metal are calculated, a.nd it is shown that, it is ¡possible to diminish the front-surface reflectivity using a Si:iN.| dielectric coating to optimize the quantum efficiency. High speed and spectral efficiency/ measurements on fabricated photodiodes are also presented.en_US
dc.description.statementofresponsibilityGökkavas, Mutluen_US
dc.format.extentxi, 69 leavesen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResonant cavitiesen_US
dc.subjectphotodiodesen_US
dc.subjectSchottkyen_US
dc.subjectscattering matrices (S matrices).en_US
dc.subject.lccTK7871.89.S35 G65 1996en_US
dc.subject.lcshDiodes, Schottky-barrier.en_US
dc.titleDesign and characterization of resonant cavity enhanced Schottky photodiodesen_US
dc.typeThesisen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US


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