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dc.contributor.advisorÇıracı, Salim
dc.contributor.authorGülseren, Oğuz
dc.date.accessioned2016-01-08T20:08:06Z
dc.date.available2016-01-08T20:08:06Z
dc.date.issued1988
dc.identifier.urihttp://hdl.handle.net/11693/17202
dc.descriptionAnkara :The Department of Physics and the Institute of Graduate Studies of Bilkent Univ. , 1988.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1988.en_US
dc.descriptionIncludes bibliographical references leaves 60-70.en_US
dc.description.abstractA brief review about the two dimensional electron systems and especially band offsets is given. The electronic properties of the Si„/Ge„(001) strained superlattices as a function of the superlattice periodicity and the band misfit is investigated by using the empirical tight-binding method. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n = 6. Consequently, the superlattice with n = 6 can be considered as quasi-direct, while it is at least 0.15 eV for n = 4 case. For the cases n=5,6, and 8, the band gap might become direct for large values of band misfit.en_US
dc.description.statementofresponsibilityGülseren, Oğuzen_US
dc.format.extentix, 70 leaves, illustrationsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectsuperlatticesen_US
dc.subjectband discontinuityen_US
dc.subjectband line-upen_US
dc.subjectband offseten_US
dc.subjectstrained superlatticesen_US
dc.subjectoptical transitionen_US
dc.subject.lccQC611.8.S86 G952 1988en_US
dc.subject.lcshElectronic Structure.en_US
dc.subject.lcshSuperlattices as Materials.en_US
dc.subject.lcshSemiconductors.en_US
dc.titleElectronic structure of Si/Ge semiconductor superlatticesen_US
dc.typeThesisen_US
dc.departmentDepartment of Physicsen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US


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