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dc.contributor.advisorOkyay, Ali Kemalen_US
dc.contributor.authorYeşilyurt, Alperen_US
dc.date.accessioned2016-01-08T18:15:43Z
dc.date.available2016-01-08T18:15:43Z
dc.date.issued2011
dc.identifier.urihttp://hdl.handle.net/11693/15259
dc.descriptionAnkara : The Department of Electrical and Electronics Engineering and the Institute of Engineering and Sciences of İhsan Doğramacı Bilkent University, 2011.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 2011.en_US
dc.descriptionIncludes bibliographical references leaves 57-65.en_US
dc.description.statementofresponsibilityYeşilyurt, Alperen_US
dc.format.extentxiii, 65 leaves, graphicsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSiGeen_US
dc.subjectphotodetectoren_US
dc.subjectelectro-absorption modulatoren_US
dc.subjectquantum wellen_US
dc.subjectquantum-confined Stark effecten_US
dc.subjectoptical interconnecten_US
dc.subject.lccTK8304 .Y47 2011en_US
dc.subject.lcshPhotoelectronic devices.en_US
dc.subject.lcshPhoton detectors.en_US
dc.subject.lcshOptoelectronic devices.en_US
dc.subject.lcshSemiconductors.en_US
dc.subject.lcshSilicon.en_US
dc.subject.lcshGermanium.en_US
dc.subject.lcshQuantum wells.en_US
dc.subject.lcshModulators (Electronics)en_US
dc.titleSilicon Germanium multi quantum wells for high efficiency optoelectronic devicesen_US
dc.typeThesisen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US


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