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dc.contributor.advisorÖzbay, Ekmelen_US
dc.contributor.authorAcar, Muhammed A.en_US
dc.date.accessioned2016-01-08T18:11:38Z
dc.date.available2016-01-08T18:11:38Z
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/11693/14970
dc.descriptionAnkara : The Department of Electrical and Electronics Engineering and the Institute of Engineering and Sciences of Bilkent University, 2009.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 2009.en_US
dc.descriptionIncludes bibliographical references leaves 154-160.en_US
dc.description.statementofresponsibilityAcar, Muhammed Aen_US
dc.format.extentxvii, 160 leaves, illustrationsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subject.lccTK7871.2 .A33 2009en_US
dc.subject.lcshMicrowave amplifiers--Design and construction--Data processing.en_US
dc.subject.lcshMicrowave integrated circuits--Design and construction--Data processing.en_US
dc.subject.lcshPower amplifiers--Design and construction--Data processing.en_US
dc.subject.lcshGallium arsenide semiconductors.en_US
dc.titleFabrication, modeling and characterization of GaN HEMTs, and design of high power MMIC amplifiersen_US
dc.typeThesisen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US
dc.identifier.itemidB120043


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