Browsing Theses - Department of Physics by Title
Now showing items 57-76 of 233
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Fabrication and characterization of amorphous silicon microcavities
(Bilkent University, 1999)In this thesis, planar amorphous silicon microcavities were fabricated and characterized at room temperature. Microcavities were realized by embedding the active amorphous silicon layer between distributed Bragg reflectors, ... -
Fabrication and characterization of Bismuth Hall sensors at room temperature
(Bilkent University, 2003)Small-scale Hall effect devices have attracted a great deal of research interest in recent years. It is well known that bulk single crystal of bismuth exhibit a large magnetoresistance effect and the recognition of this ... -
Fabrication and characterization of GaAs and InAs hall sensors
(Bilkent University, 2004)Scanning Hall Probe Microscopy has become a widely used method for magnetic field measurements in the last decade. For Scanning Hall Probe Microscopy, low noise Hall sensors are fabricated from GaAs and InAs structures ... -
Fabrication and characterization of high speed resonant cavity enhanced Schottky photodiodes
(Bilkent University, 1996)High speed, high external quantum efficiency and narrow spectral linewidth make resonant cavity enhanced (RC E) Schottky photodetector a good candidate for telecommunication applications. In this thesis, we present our ... -
Fabrication and characterization of high-speed, high quantum efficiency, resonant cavity enhanced Schottky photodiodes
(Bilkent University, 1998)Rapidly developing “photonics” technology promises higher bcindwidths of communiccition than any other techniciue did ever. The increasing rate of communication not only alters science and technology, but brings a global ... -
Fabrication and characterization of microelectromechanical resonators
(Bilkent University, 2006)Micromachined mechanical resonators are of considerable interest because of their many important scienti c and technological applications. They can be used as a components of radio-frequency lters in communication ... -
Fabrication and characterization of semiconductor double quantum well diode lasers
(Bilkent University, 1998)In this thesis, semiconductor double quantum well, Fabry-Perot and half ring hisers were fabricated, and these devices were operated and characterized at room temperature. The lasers were fabricated using GaAs/AlGaAs ... -
Fabrication, characterization and simulation of plasmonic cavities
(Bilkent University, 2010)Surface plasmon polaritons (SPPs) originate from the collective oscillations of conduction electrons coupled with photons propagating at metal-dielectric interfaces. A uniform metallic gratings change the dispersion ... -
Fabrication, characterization, and extraction of GaAs mesfets
(Bilkent University, 1994)Metal Semiconductor Field Effect Transistor (MESFET) is the most widely used active element of today’s microwave industry. After development of the MESFET technology, the microwave industry gained a high acceleration, ... -
First principles study of 2D gallium nitride and aluminium nitride in square-octagon structure
(Bilkent University, 2017-08)This thesis, deals with the planar free-standing, single-layer, square-octagon (SO) structures of GaN and AlN. We investigated single-layer and multilayer so-GaN and so-AlN structures, their stability, electronic properties ... -
First-principles investigation of functionalization of graphene
(Bilkent University, 2013)The graphene sheet is a single-atom thick novel material and attracts great interest due to its unique features. However, it is a metallic material with no bandgap, which makes it difficult to integrate in electronic ... -
First-principles investigation of graphitic nanostructures
(Bilkent University, 2013)In this thesis, first-principles investigations of several graphene related nanosystems based on density functional theory are presented. First, the electronic structure of several graphene nano-ribbons both in 1D and ... -
Formation of Ge nanocrystals with CW laser irradiation of Siox:Ge thin films
(Bilkent University, 2015)Germanium and silicon are the materials which have effective absorption in the visible and near infrared region of electromagnetic spectrum; therefore they are preferred for optoelectronic device and solar cell applications. ... -
Formation of silicon nanocrystals by laser processing of silicon rich oxides
(Bilkent University, 2012)Silicon nanocrystals are well known to exhibit strong luminescence in the visible. Extension of this into a nanocrystal network would be beneficial for many applications. In the light of recent advances on exciton-plasmon ... -
Frictional properties of quasi-two-dimensional materials from the Prandtl-Tomlinson model
(Bilkent University, 2016-10)Tribology, the study of friction, is both an old theoretical problem in physics and an area of great practical importance. The invention of experimental instruments such as Atomic Force Microscope (AFM) has lead to the ... -
Functionalization of carbon nanotubes
(Bilkent University, 2005) -
GaAs/AlGaAs polarization splitting directional couplers
(Bilkent University, 1997)Directional couplers are building blocks for m any guided wave devices in integrated optics and optoelectronics. They have been used as switches, modulators, wavelength filters, power dividers, wavelength m ultiplexer-dem ... -
Gain measurements via spontaneous emission in quantum well semiconductor lasers
(Bilkent University, 1996)111 this work ail analysis of gain in single c|iianliini well last'rs as a riinction of sonu' of llu'ir o|)(M’alioiial paranu'l('rs is earrii'd oiil. I^'irsl, a 1 li('or('liea.l inodi'l of gain is |)resent('d. 'riuMi two ... -
GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS
(Bilkent University, 2008)The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver ... -
Germanium alloys for optoelectronic devices
(Bilkent University, 2008)Silicon has been the backbone of the mainstream electronics of the last fifty years. It is however, used in conjunction with other matierals, mainly with its oxides and nitrides. Germanium, on the other hand, is also a ...
