Now showing items 1-6 of 6
Facile Synthesis of Three-Dimensional Pt-TiO2Nano-networks: A Highly Active Catalyst for the Hydrolytic Dehydrogenation of Ammonia–Borane
Three‐dimensional (3D) porous metal and metal oxide nanostructures have received considerable interest because organization of inorganic materials into 3D nanomaterials holds extraordinary properties such as low density, ...
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
(Springer New York LLC, 2015)
In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ...
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
(Wiley-VCH Verlag, 2015)
A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ...
Two-nanometer laser synthesized Si-nanoparticles for low power memory applications
(Springer International Publishing, 2016)
Current flash memory devices are expected to face two major challenges in the near future: density and voltage scaling. The density of the memory is related to the gate length scaling which is constrained by the gate stack, ...
Low power Zinc-Oxide based charge trapping memory with embedded silicon nanoparticles
In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ...
Silicon nanoparticle charge trapping memory cell
(Wiley-VCH Verlag, 2014)
A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and ...