Browsing Institute of Materials Science and Nanotechnology (UNAM) by Keywords "Zinc Sulfide"
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Low temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels (AIP Publishing LLC, 2014)We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found ...