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Low Power Zinc-Oxide Based Charge Trapping Memory with Embedded Silicon Nanoparticles
(Electrochemical Society Inc., 2014)
In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ...