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Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)
Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ...
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...