Now showing items 1-3 of 3
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(A I P Publishing LLC, 2008)
Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ...
Raman and TEM studies of Ge nanocrystal formation in SiO x: Ge / SiOx multilayers
Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...
Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers
(Academic Press, 2017)
Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating ...