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Raman and TEM studies of Ge nanocrystal formation in SiO x: Ge / SiOx multilayers
Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...
Charge retention in quantized energy levels of nanocrystals
(Elsevier B.V., 2007)
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon ...