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Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
(Optical Society of America, 2013)
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating ...
Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...