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The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ...
Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...