Now showing items 1-6 of 6
Strong nonradiative energy transfer from the nanopillars of quantum wells to quantum dots: Efficient excitonic color conversion for light emitting diodes
(Optical Society of America, 2012)
Efficient nonradiative energy transfer is observed from nanopillars of InGaN/GaN quantum wells to colloidal CdSe/ZnS quantum dots up to 83% efficiency. Nanostructured architecture is shown to promote excitonic color ...
Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
(American Institute of Physics Inc., 2017)
Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...
A PN-type quantum barrier for InGaN/GaN light emitting diodes
(Optical Society of American (OSA), 2013)
In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the ...
Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
(Optical Society of America, 2013)
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating ...
Temperature-dependent optoelectronic properties of quasi-2D colloidal cadmium selenide nanoplatelets
(Royal Society of Chemistry, 2017)
Colloidal cadmium selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterials suitable for optoelectronic device applications. A change in temperature greatly affects their ...
A hole modulator for InGaN/GaN light-emitting diodes
(American Institute of Physics, 2015)
The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...