Now showing items 1-5 of 5
Photonic-crystal-based resonant-cavity-enhanced detectors
A layer-by-layer three-dimensional photonic crystal, with a full photonic bandgap (PBG) in all directions is proposed. The electrical fields in the cavities of this crystal are usually enhanced, and by placing active devices ...
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely ...
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ...
Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...
Strong enhancement of spontaneous emission in hydrogenated amorphous silicon nitride coupled-microcavity structures
The modification of spontaneous emission from the hydrogenated amorphous silicon nitride layers in a coupled-microcavity (CMC) structure was investigated. The CMC structure was composed of alternating silicon-oxide and ...