The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...

In this work, we propose and develop the inorganic salt encapsulation of semiconductor nanocrystal (NC) dispersion in a nonpolar phase to make a highly stable and highly efficient colour converting powder for colour ...

Nonradiative energy transfer (NRET) is an alternative excitation mechanism in colloidal quantum dot (QD) based electroluminescent devices (QLEDs). Here, we develop hybrid highly spectrally pure QLEDs that facilitate energy ...

π-Conjugated polymers suffer from low quantum yields (QYs) due to chain–chain interactions. Furthermore, their emission in solid films is significantly quenched due to aggregation leading further decrease in QY. These are ...

In this paper, for their use as nanoluminophors on color-conversion white light emitting diodes (LEDs), we present spectrally resolved relative quantum efficiency and relative color (photon) conversion efficiency of CdSe/ZnS ...

Here we report CdSe nanoplatelets that are incorporated into color-converting CdSe/ZnS nanocrystals for InGaN/GaN light-emitting diodes. The critical role of CdSe nanoplatelets as an exciton donor for the color conversion ...

Oligomer nanoparticles (OL NPs) have been considered unsuitable for solid-state lighting due to their low quantum yields and low temperature stability of their emission. Here, we address these problems by forming highly ...

Here we report excitonic improvement in color-converting colloidal nanocrystal powders enabled by co-integrating nonpolar greenand red-emitting nanocrystal energy transfer pairs into a single LiCl salt matrix. This leads ...

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer ...

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...