Now showing items 1-5 of 5
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs ...
Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
(American Institute of Physics Inc., 2017)
Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...
A charge inverter for III-nitride light-emitting diodes
(American Institute of Physics Inc., 2016)
In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
(Optical Society of America, 2014)
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
Electroluminescence efficiency enhancement in quantum dot light-emitting diodes by embedding a silver nanoisland layer
(Wiley-VCH Verlag, 2015)
A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer. The maximum external quantum efficiency ...