Now showing items 1-4 of 4
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs ...
Colloidal quantum dot light-emitting diodes employing phosphorescent small organic molecules as efficient exciton harvesters
(American Chemical Society, 2014)
Nonradiative energy transfer (NRET) is an alternative excitation mechanism in colloidal quantum dot (QD) based electroluminescent devices (QLEDs). Here, we develop hybrid highly spectrally pure QLEDs that facilitate energy ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
(Optical Society of America, 2014)
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ...