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    • SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers 

      Ağan, S.; Aydınlı, Atilla (World Scientific Publishing, 2009)
      We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray ...