Now showing items 1-2 of 2

    • Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD 

      Arslan, E.; Öztürk, M. K.; Tıraş, E.; Tıraş, T.; Özçelik, S.; Özbay, Ekmel (Springer New York LLC, 2017)
      High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low ...
    • Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction 

      Öztürk, M. K.; Hongbo, Y.; SarIkavak, B.; Korçak, S.; Özçelik, S.; Özbay, Ekmel (Springer, 2009-04-18)
      The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...