Browsing Department of Physics by Author "Ulusoy Ghobadi, Türkan Gamze"

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Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs

Gülseren, Melisa Ekin; Kurt, Gökhan; Ulusoy Ghobadi, Türkan Gamze; Ghobadi, Amir; Salkım, Gurur; Öztürk, Mustafa; Bütün, Bayram; Özbay, Ekmel (IOP, 2019-07)

In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in ...