Browsing Department of Physics by Author "Ridley, B. K."
Now showing items 1-6 of 6
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Comparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivity
Bulutay, C.; Ridley, B. K.; Zakhleniuk, N. A. (American Institute of Physics, 2000)For high-power electronics applications, GaN is a promising semiconductor. Under high electric fields, electrons can reach very high energies where polar optical phonon (POP) emission is the dominant scattering mechanism. ... -
Electron momentum and energy relaxation rates in GaN and AlN in the high-field transport regime
Bulutay, C.; Ridley, B. K.; Zakhleniuk, N. A. (The American Physical Society, 2003)Momentum and energy relaxation characteristics of electrons in the conduction band of GaN and AlN are investigated using two different theoretical approaches corresponding to two high electric-field regimes, one up to 1-2 ... -
Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN
Bulutay, C.; Ridley, B. K.; Zakhleniuk, N. A. (American Physical Society, 2000-12-15)GaN has promising features for high-field electronics applications. To scrutinize these transport-related properties, primarily the dominant scattering mechanism in this material needs to be well characterized. In the quest ... -
High-energy electron relaxation and full-band electron dynamics in aluminium nitride
Bulutay, Ceyhun; Ridley, B. K.; Zakhleniuk, N. A. (Elsevier, 2002)Material properties of AlN, particularly its wide band gap around 6 eV, warrant its operation in the high-field transport regimes reaching MV/cm fields. In this theoretical work, we examine the full-band scattering of ... -
Polar optical phonon scattering and negative Kromer-Esaki-Tsu differential conductivity in bulk GaN
Bulutay, C.; Ridley, B. K.; Zakhleniuk, N. A. (Elsevier, 2001-09)GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant ... -
Theoretical assessment of electronic transport in InN
Bulutay, C.; Ridley, B. K. (Elsevier, 2004)Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical ...