Now showing items 1-2 of 2

    • Nonequilibrium electron relaxation in graphene 

      Rani, Luxmi; Bhalla, P.; Singh, N. (World Scientific Publishing, 2019)
      We apply memory function formalism to investigate nonequilibrium electron relaxation in graphene. Within the premises of two-temperature model (TTM), explicit expressions of the imaginary part of the memory function or ...
    • A novel effect of Electron Spin Resonance on electrical resistivity 

      Singh, N.; Rani, Luxmi (Elsevier, 2018)
      We extend the well known phenomenon of magnetoresistance (extra resistivity of materials in transverse magnetic field) to a regime where in addition to a transverse magnetic field, a transverse microwave field of resonant ...