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    • Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment 

      Kurt, Gökhan; Gülseren, Melisa Ekin; Ghobadi, Türkan Gamze Ulusoy; Ural, Sertaç; Kayal, Ömer Ahmet; Öztürk, Mustafa; Bütün, Bayram; Kabak, Mehmet; Özbay, Ekmel (Elsevier, 2019)
      We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of ...