Now showing items 1-8 of 8

    • All-chalcogenide variable infrared filter 

      Kondakcı, H. Esat; Köyle, Özlem; Yaman, Mecit; Dana, Aykutlu; Bayındır, Mehmet (SPIE, 2009)
      We present the design, fabrication, characterization of spatially variable infrared filter and a demonstration of the filter as a simple infrared spectrometer. A varying photonic band gap filter which consists of thermally ...
    • Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm 

      Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Fiore, A.; Dagli, N. (IEEE, 2007)
      In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active ...
    • Electric field dependence of modulation in multilayer InAs quantum dot waveguides 

      Akça, Imran B.; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li, A.; Fiore, A.; Dagli, N. (IEEE, 2007)
      The low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement ...
    • Electro-optic and electro-absorption characterization of InAs quantum dot waveguides 

      Akça, İmran B.; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li, L.; Fiore, A.; Dağlı, N. (Optical Society of America, 2008-03)
      Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures ...
    • Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures 

      Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Dagli, N.; Fiore, A. (IEEE, 2007)
      The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs ...
    • Modulation in InAs quantum dot waveguides 

      Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Fiore, A.; Dagli, N. (Optical Society of America, 2007)
      Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were ...
    • Modulation of multilayer InAs quantum dot waveguides under applied electric field 

      Akça, Imran B.; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Fiore, A.; Dagli, N. (Optical Society of America, 2007)
      Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained ...
    • Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers 

      Dana, Aykutlu; Aǧan, S.; Tokay, S.; Aydınlı, Atilla; Finstad, T. G. (Wiley, 2007)
      Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...