Now showing items 1-6 of 6
Dc-switchable and single-nanocrystal-addressable coherent population transfer
Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer ...
Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films
(Materials Research Society, 2011)
Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, ...
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)
Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ...
Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured ...
A figure of merit for optimization of nanocrystal flash memory design
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ...
SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers
(World Scientific Publishing, 2009)
We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray ...