Comparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fields
Ju, J W.
Ahn, H K.
Lee, I. H.
Baek, J. H.
Demir, H. V.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/13530
Applied Physics Letters
We present a comparative study on InGaN/GaN quantum zigzag structures embedded in p-i-n diode architecture that exhibit blue-shifting electroabsorption in the blue when an electric field is externally applied to compensate for the polarization-induced electric field across the wells. With the polarization breaking their symmetry, the same InGaN/GaN quantum structures redshift their absorption edge when the external field is applied in the same direction as the well polarization. Both computationally and experimentally, we investigate the effects of polarization on electroabsorption by varying compositional content and structural parameters and demonstrate that electroabsorption grows stronger with weaker polarization in these multiple quantum well modulators. (c) 2008 American Institute of Physics.
Sari, E., Ozel, T., Koc, A., Ju, J. W., Ahn, H. K., Lee, I. H., ... & Demir, H. V. (2008). Comparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fields. Applied Physics Letters, 92(20), 201105-201105.