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      Comparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fields

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      Author
      Sari, E.
      Ozel, T.
      Koc, A.
      Ju, J. W.
      Ahn, H.-K.
      Lee, I.-H.
      Baek, J.-H.
      Demir, Hilmi Volkan
      Date
      2008-05-19
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing LLC
      Volume
      92
      Issue
      20
      Pages
      201105-1 - 201105-3
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We present a comparative study on InGaN/GaN quantum zigzag structures embedded in p-i-n diode architecture that exhibit blue-shifting electroabsorption in the blue when an electric field is externally applied to compensate for the polarization-induced electric field across the wells. With the polarization breaking their symmetry, the same InGaN/GaN quantum structures redshift their absorption edge when the external field is applied in the same direction as the well polarization. Both computationally and experimentally, we investigate the effects of polarization on electroabsorption by varying compositional content and structural parameters and demonstrate that electroabsorption grows stronger with weaker polarization in these multiple quantum well modulators.
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      http://hdl.handle.net/11693/13530
      Published Version (Please cite this version)
      https://doi.org/10.1063/1.2931696
      Collections
      • Department of Electrical and Electronics Engineering 3601
      • Department of Physics 2331
      • Institute of Materials Science and Nanotechnology (UNAM) 1841
      • Nanotechnology Research Center (NANOTAM) 1027
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